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It has been shown that increasing carbon atoms in amorphous silicon carbide silicon carbide abrasive powderwill increase the optical band gap, and the fraction of carbon affects the optical properties negatively in amorphous silicon carbide [45, 46]. Also, the result shows that the optical band gap changes as the silicon concentration increases. A non-stoichiometric Si-rich SixC1-x film can increase the percentage of the conversion efficiency of a p-n junction photovoltaic solar cell by up to 3% than that of crystalline silicon within the visible wavelengths (400–600 nm) which is due to enhanced optical absorption. Si-rich SixC1-x film can also be used to engineer the visible and near-infrared absorbance and can be enhanced [44, 45, 47]. These results indicate that the absorption coefficient correlates with the ratio of silicon-rich silicon carbide [44, 45]. The experimental result also shows that due to the increasing number of silicon atoms in Si-rich SixC1-x, the optical bandgap of the Si-rich SixC1-x has been reduced from 2.05 eV to 1.49 eV [44]. The silicon and carbon ratio of the Si-rich SixC1-x films can be characterized by utilizing X-ray photoelectron spectroscopy and Mg Kα radiation at 1253.6 eV, and the transmittance and reflectance spectra can be used to analyze the absorption coefficient of Si-rich SixC1-x [44]. It has been shown before that the optical absorption capability of non-stoichiometric silicon-rich silicon carbide film is better with reduced optical bandgap than crystalline silicon (c-Si) [44, 47], hence non-stoichiometric Si-rich SixC1-x can be used as an alternative to silicon in photovoltaic applications.

The silicon-rich silicon carbide films have been synthesized by using low temperature and low power plasma enhanced CVD (PECVD) method in a system which is rich by the inorganic compound silane [44, 45]. Moreover, silicon-rich silicon carbide has existed as a nonstoichiometric matrix which corresponds to Si fabrication technology to keep the self-assembled Si-quantum dots (QDs) [48].
hslabrasive
Si-rich SiC:Si0.74C0.26 film has an optical bandgap around 1.45 eV which provides a large absorption coefficient of 3.8 × 105 cm−1 in the visible wavelength region. In the limit of all C atoms replaced by Si atoms, the band gap should approach to pure Si gap which is 1.1 eV [47]. However, we would like to avoid the indirect band gap problem which a shortcoming of pristine Si solar cell devices. Due to the tunability of the band gap, this material nowadays is being used in optoelectronic devices such as light-emitting diodes as well [48].

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